DARPA, BAE Systems Tackle Heat in GaN Electronics
1 source · first reported 3h ago
DARPA and BAE Systems are working on a program to solve heat issues in next-gen GaN electronics. The project has moved into its second phase. This collaboration aims to overcome the heat challenges holding back the development of advanced GaN electronics.
Why it matters
The success of this program could significantly advance the development of next-gen GaN electronics, enhancing the performance and capabilities of various military systems. This technology has the potential to improve the efficiency and reliability of defense electronics.
Independent Media 1
Single-source: Independent Media
Development timeline
How this story unfolded across sources, oldest first.